FDN5618P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN5618P
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 500 mW -60 V Continuous Drain Current (ID):1.25 A 13.8 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 170 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -1.25 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | -1.6 V |
| Number of Channels | 1 |
| Input capacitance | 430 pF |
| Continuous Drain Current (ID) | 1.25 A |
| Rds On Max | 170 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 16.5 ns |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | -60 V |
| Gate Charge | 13.8 nC |
| Drain to Source Resistance | 170 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 20 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1863
Distributors
pcbx
pcbxUnit Price$0.15514
Ext.Price$0.15514
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.15514 | $0.15514 |
| 10 | $0.13780 | $1.37800 |
| 50 | $0.12240 | $6.12000 |
| 100 | $0.10604 | $10.60400 |
| 500 | $0.09186 | $45.93000 |
| 1000 | $0.08830 | $88.30000 |
| 3000 | $0.08487 | $254.61000 |
| 5000 | $0.08016 | $400.80000 |